Infineon HEXFET N-Channel MOSFET, 7.3 A, 30 V, 8-Pin SOIC IRF7201TRPBF
- RS庫存編號:
- 165-5930
- 製造零件編號:
- IRF7201TRPBF
- 製造商:
- Infineon
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- RS庫存編號:
- 165-5930
- 製造零件編號:
- IRF7201TRPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7.3 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 50 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Length | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4mm | |
| Number of Elements per Chip | 1 | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.3 A | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 50 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Width 4mm | ||
Number of Elements per Chip 1 | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon HEXFET Series MOSFET, 7.3A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF7201TRPBF
This N-channel MOSFET is engineered for efficient switching in various applications. Featuring advanced HEXFET technology, it provides superior performance with low on-resistance and high power dissipation capabilities. With a continuous drain current of 7.3A and a drain-source voltage of 30V, this component is suitable for automation, electronics, and other technical environments where efficiency and reliability are essential.
Features & Benefits
• Low RDS(on) enhances energy efficiency
• Maximum power dissipation of 2.5W
• Gate threshold voltage of only 1V
• Designed for surface mount applications to optimise space
• Fast switching speed improves system responsiveness
• Maximum power dissipation of 2.5W
• Gate threshold voltage of only 1V
• Designed for surface mount applications to optimise space
• Fast switching speed improves system responsiveness
Applications
• Utilised in power management systems
• Suitable for motor control
• Commonly used in automotive switching elements
• Employed in power supply circuits
• Applicable in telecommunications equipment
• Suitable for motor control
• Commonly used in automotive switching elements
• Employed in power supply circuits
• Applicable in telecommunications equipment
How does the low RDS(on) benefit circuit efficiency?
The low RDS(on) reduces power losses through the device, boosting overall circuit efficiency and minimising heat generation.
What temperatures can this MOSFET operate within?
It operates effectively within a range of -55°C to +150°C, making it versatile for various environmental conditions.
What is the significance of the gate threshold voltage?
A low gate threshold voltage facilitates easier control of the MOSFET, enabling it to switch on with lower input signals and enhancing compatibility with diverse circuits.
Can this MOSFET handle pulsed currents?
Yes, it can manage pulsed drain currents up to 58A, suitable for applications requiring short bursts of power.
What manufacturing processes ensure its reliability?
Advanced processing techniques are implemented to achieve low on-resistance and robust device design, ensuring dependable performance in challenging applications.