Infineon HEXFET N-Channel MOSFET, 161 A, 30 V, 3-Pin DPAK IRLR7843TRPBF
- RS庫存編號:
- 165-5923
- 製造零件編號:
- IRLR7843TRPBF
- 製造商:
- Infineon
可享批量折扣
單價 個 (在毎卷：2000)**
原價 TWD21.539
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TWD18.50
(不含稅)
TWD19.42
(含稅)
12000 現貨庫存，可於6工作日發貨。*
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單位 | 每單位 | 每卷** |
|---|---|---|
| 2000 - 8000 | TWD18.50 | TWD37,000.00 |
| 10000 + | TWD18.10 | TWD36,200.00 |
** 參考價格
- RS庫存編號:
- 165-5923
- 製造零件編號:
- IRLR7843TRPBF
- 製造商:
- Infineon
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 161A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRLR7843TRPBF
This MOSFET is tailored for high-performance applications in the electrical and electronics sectors, especially suitable for automotive and industrial needs. Its HEXFET technology ensures impressive efficiency and reliability, making it ideal for high-frequency synchronous buck converters and isolated DC-DC converters. The device effectively manages power dissipation, enhancing the performance of electronic systems.
Features & Benefits
• Extremely low RDS(on) optimises power loss and efficiency
• High continuous drain current rating supports intensive applications
• Designed for high operating temperatures to ensure performance
• Lead-free construction meets environmentally conscious design standards
• Low gate charge improves switching behaviour in circuits
• High continuous drain current rating supports intensive applications
• Designed for high operating temperatures to ensure performance
• Lead-free construction meets environmentally conscious design standards
• Low gate charge improves switching behaviour in circuits
Applications
• Used in high-frequency synchronous buck converters
• Employed in isolated DC-DC converters for telecom systems
• Serves automotive power management systems
• Suitable for industrial power supplies requiring enhanced efficiency
• Ideal for power regulation in computer processors
• Employed in isolated DC-DC converters for telecom systems
• Serves automotive power management systems
• Suitable for industrial power supplies requiring enhanced efficiency
• Ideal for power regulation in computer processors
What are the typical thermal performance characteristics?
The maximum operating temperature is +175°C with a thermal resistance of 50°C/W from junction to ambient, ensuring effective performance in thermal environments.
How does the low RDS(on) affect overall circuit design?
Low RDS(on) reduces conduction losses, leading to improved efficiency under varying load conditions, which is crucial for high-performance designs.
Can it handle pulse currents effectively?
Yes, it can accommodate pulsed drain currents of up to 620 A, ensuring operational reliability under dynamic loads.
What mounting methods are compatible with this component?
As a surface mount component in DPAK package, it is suitable for automated assembly processes.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 161 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | DPAK (TO-252) |
| Series | HEXFET |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.3V |
| Minimum Gate Threshold Voltage | 1.4V |
| Maximum Power Dissipation | 140 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 34 nC @ 4.5 V |
| Width | 6.22mm |
| Length | 6.73mm |
| Height | 2.39mm |
| Minimum Operating Temperature | -55 °C |