Infineon HEXFET Type N-Channel MOSFET, 250 A, 40 V Enhancement, 3-Pin TO-263

RS庫存編號:: 165-5484
製造零件編號:: IRFS7437TRLPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 250 A, 40 V Enhancement, 3-Pin TO-263

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小計（1 卷，共 800 件）*

TWD23,120.00

(不含稅)

TWD24,272.00

訂單超過 $1,300.00 免費送貨

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單位	每單位	每卷*
800 - 3200	TWD28.90	TWD23,120.00
4000 +	TWD28.40	TWD22,720.00

* 參考價格

RS庫存編號:: 165-5484
製造零件編號:: IRFS7437TRLPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	250A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.8mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	150nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	230W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Height	4.83mm
	Standards/Approvals	No
	Width	9.65 mm
	Length	10.67mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 250A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.8mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 150nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 230W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Height 4.83mm
	Standards/Approvals No
	Width 9.65 mm
	Length 10.67mm
	Automotive Standard No

不適用

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 250A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRFS7437TRLPBF

This MOSFET is intended for high-performance applications that require efficient power management. It is utilised across various sectors and offers robust features suitable for challenging environments. Its Ability to manage high current and voltage levels makes it well-suited for Advanced technology applications.

Features & Benefits

• Supports a maximum continuous drain current of 250A for high-power applications

• Offers a maximum drain-source voltage of 40V, ensuring reliability in different setups

• Exhibits low Rds(on) of 1.4mΩ, contributing to reduced power losses

• Designed for surface mounting, simplifying installation

• Capable of handling Rapid switching applications, which enhances efficiency

Applications

• Suitable for brushed motor drive

• Ideal for battery-powered circuits, enabling efficient power usage

• Employed in half-bridge and full-bridge topologies for precise control

• Utilised in synchronous rectifier to enhance energy savings

• Applicable in resonant mode power supplies for stable performance

How is the power dissipation managed during operation?

Power dissipation is managed through a maximum rating of 230W, ensuring thermal stability under high load conditions.

What is the significance of the low Rds(on) value?

The low Rds(on) Value minimises energy loss during operation, improving efficiency in high-current applications.

Can this be used in high-temperature environments?

With an operating temperature range of -55°C to +175°C, it is suitable for diverse applications, including high-temperature environments.

What installation considerations should I be aware of?

Ensure proper thermal management as per specifications to maintain operational efficiency and reliability during intense applications.

Is it compatible with various power supply designs?

Yes, the MOSFET is versatile and can be integrated into numerous power supply designs, providing adaptability across different projects.