STMicroelectronics STI28 Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin I2PAK

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  • 2026年9月22日 發貨
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包裝方式:
RS庫存編號:
164-6985P
製造零件編號:
STI28N60M2
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

22A

Maximum Drain Source Voltage Vds

650V

Package Type

I2PAK

Series

STI28

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

36nC

Maximum Power Dissipation Pd

170W

Maximum Operating Temperature

150°C

Height

9.3mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Extremely low gate charge

Excellent output capacitance (COSS ) profile

100% avalanche tested

Zener-protected

Extremely low Qg for increased efficiency

Optimized gate charge and capacitance profiles for resonant power supplies (LLC converters)