製造零件編號

onsemi Isolated 2 Type N-Channel Power MOSFET, 4 A, 30 V Enhancement, 8-Pin SOIC

RS庫存編號:: 163-1128
製造零件編號:: NTMD4N03R2G
製造商:: onsemi

onsemi Isolated 2 Type N-Channel Power MOSFET, 4 A, 30 V Enhancement, 8-Pin SOIC

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2500 件）*

TWD23,500.00

(不含稅)

TWD24,675.00

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每卷*
2500 - 2500	TWD9.40	TWD23,500.00
5000 +	TWD9.10	TWD22,750.00

* 參考價格

RS庫存編號:: 163-1128
製造零件編號:: NTMD4N03R2G
製造商:: onsemi

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	onsemi
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2W
	Minimum Operating Temperature	150°C
	Typical Gate Charge Qg @ Vgs	8nC
	Forward Voltage Vf	0.82V
	Transistor Configuration	Isolated
	Maximum Operating Temperature	-55°C
	Length	5mm
	Height	1.5mm
	Standards/Approvals	No
	Width	4 mm
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	選取全部
	品牌 onsemi
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2W
	Minimum Operating Temperature 150°C
	Typical Gate Charge Qg @ Vgs 8nC
	Forward Voltage Vf 0.82V
	Transistor Configuration Isolated
	Maximum Operating Temperature -55°C
	Length 5mm
	Height 1.5mm
	Standards/Approvals No
	Width 4 mm
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

COO (Country of Origin):: PH

onsemi Isolated 2 Type N-Channel Power MOSFET, 4 A, 30 V Enhancement, 8-Pin SOIC

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