IXYS HiperFET Type N-Channel MOSFET, 80 A, 250 V Enhancement, 4-Pin TO-220 IXFP80N25X3
- RS庫存編號:
- 146-4233
- 製造零件編號:
- IXFP80N25X3
- 製造商:
- IXYS
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 50 件)*
TWD10,510.00
(不含稅)
TWD11,035.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 150 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD210.20 | TWD10,510.00 |
| 100 - 150 | TWD205.70 | TWD10,285.00 |
| 200 + | TWD201.10 | TWD10,055.00 |
* 參考價格
- RS庫存編號:
- 146-4233
- 製造零件編號:
- IXFP80N25X3
- 製造商:
- IXYS
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | HiperFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 390W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 83nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 16mm | |
| Length | 10.66mm | |
| Width | 4.83 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series HiperFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 390W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 83nC | ||
Maximum Operating Temperature 150°C | ||
Height 16mm | ||
Length 10.66mm | ||
Width 4.83 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
IXYS Corporation (NASDAQ: IXYS), a global manufacturer of Power Semiconductors and integrated circuits (ICs) for energy efficiency, power management, transportation, medical, and motor control applications, has released a new power semiconductor product line: 250V Ultra-Junction X3-Class HiPerFET™ Power MOSFETs. With on-resistances and gate charges as low as 4.5 milliohms and 21 nanocoulombs, respectively, these devices enable highest power densities and energy efficiencies in a wide variety of high-speed power conversion applications.Developed using a charge compensation principle and proprietary process technology, the new MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry (5 milliohms in the TO-264 package and 4.5 milliohms in the SOT-227, for instance). The fast intrinsic body diodes HiPerFETs™ of the MOSFETs display very soft recovery characteristics, minimizing voltage overshoots and electromagnetic interference (EMI), especially in half or full-bridge topologies. With low reverse recovery charge and time, the diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency.Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters.Well-suited applications include battery chargers for light electric vehicles (LEVs), synchronous rectification in switching power supplies, motor control, DC-DC converters, uninterruptible power supplies, electric forklifts, Class-D audio amplifiers, and telecom systems.The new 250V X3-Class Power MOSFETs with HiPerFET™ body diodes are available in the following international standard size packages: TO-3P, TO-220 (overmolded or standard), TO-247, PLUS247, TO-252, TO-263, TO-264, TO-268HV, SOT-227. Some example part numbers include IXFA60N25X3, IXFP80N25X3, IXFT170N25X3HV and IXFK240N25X3, with current ratings of 60A, 80A, 170A, and 240A, respectively.
Lowest on-resistance RDS(ON) and gate charge Qg
Fast soft recovery body diode dv/dt ruggedness
Superior avalanche capability
International standard packages
Battery chargers for light electric vehicles
Synchronous rectification in switching power supplies
Motor control
DC-DC converters
Uninterruptible power supplies
Electric forklifts
Class-D audio amplifiers
Telecom systems
High efficiency
High power density
Improved system reliability
Easy to design in
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