Infineon OptiMOS 3 Type N-Channel Power Transistor, 50 A, 30 V Enhancement, 3-Pin TO-220 IPP055N03LGXKSA1

RS庫存編號:: 130-0923
製造零件編號:: IPP055N03LGXKSA1
製造商:: Infineon

Infineon OptiMOS 3 Type N-Channel Power Transistor, 50 A, 30 V Enhancement, 3-Pin TO-220 IPP055N03LGXKSA1

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 10 件）*

TWD347.00

(不含稅)

TWD364.40

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 110 個，準備發貨

單位	每單位	每包*
10 - 10	TWD34.70	TWD347.00
20 - 20	TWD33.80	TWD338.00
30 +	TWD33.30	TWD333.00

* 參考價格

RS庫存編號:: 130-0923
製造零件編號:: IPP055N03LGXKSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS 3
	Package Type	TO-220
	Mount Type	Surface, Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	68W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Typical Gate Charge Qg @ Vgs	31nC
	Maximum Operating Temperature	175°C
	Width	4.57 mm
	Standards/Approvals	IEC61249-2-21, JEDEC (J-STD20,JESD22), RoHS
	Length	10.36mm
	Height	15.95mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS 3
	Package Type TO-220
	Mount Type Surface, Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 68W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Typical Gate Charge Qg @ Vgs 31nC
	Maximum Operating Temperature 175°C
	Width 4.57 mm
	Standards/Approvals IEC61249-2-21, JEDEC (J-STD20,JESD22), RoHS
	Length 10.36mm
	Height 15.95mm
	Automotive Standard No

Infineon OptiMOS™ 3 Series MOSFET, 50A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IPP055N03LGXKSA1

This high-performance MOSFET is designed for various electronic applications, including power management systems. It features a through-hole TO-220 package, measuring 10.36mm x 4.57mm x 15.95mm. Specifically suited for automation and electrical industries, this device ensures optimal performance under rigorous conditions.

Features & Benefits

• Fast switching capability enhances efficiency in power applications

• Low drain-source on-resistance minimises power loss during operation

• Avalanche rated for improved durability under stress

• Logic-level N-channel design enables compatibility with low-voltage drives

• Maximum continuous drain current of 50A supports demanding tasks

Applications

• Used for DC/DC conversion in power supplies

• Ideal for synchronous rectification in high-efficiency converters

• Facilitates motor control in industrial automation systems

• Used in battery management systems for electric vehicles

• Suitable for both consumer electronics and renewable energy

What is the significance of its low RDS(on) in power applications?

A low RDS(on) reduces the on-state voltage drop, which directly lowers heat generation and improves efficiency. This is Crucial for maintaining performance in high-current applications, ensuring that less energy is wasted as heat.

How does this MOSFET handle high temperatures during operation?

With a maximum operating temperature of +175 °C, it has robust thermal characteristics, allowing it to function reliably in challenging environments without compromising performance.

What type of applications can benefit from the enhancement mode transistor design?

Enhancement mode transistors are widely used in switching applications as they provide excellent control over the current flow, making them Ideal for efficient power management solutions. This includes their use in power supplies and DC motors.