Infineon CoolMOS P6 Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-247

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包裝方式:
RS庫存編號:
110-9099P
製造零件編號:
IPW60R190P6FKSA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247

Series

CoolMOS P6

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

37nC

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

151W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

5.21 mm

Length

16.13mm

Height

21.1mm

Automotive Standard

No

Infineon CoolMOS™E6/P6 series Power MOSFET


The Infineon range of CoolMOSE6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.