ROHM N channel-Channel MOSFET, 12 A, 40 V, 8-Pin HSMT RQ3G120BKFRATCB

N

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小計(1 組,共 10 件)*

TWD231.00

(不含稅)

TWD242.60

(含稅)

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  • 2026年6月08日 發貨
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單位
每單位
每膠帶*
10 - 90TWD23.10TWD231.00
100 - 490TWD20.40TWD204.00
500 +TWD16.40TWD164.00

* 參考價格

包裝方式:
RS庫存編號:
780-667
製造零件編號:
RQ3G120BKFRATCB
製造商:
ROHM
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品牌

ROHM

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

40V

Package Type

HSMT

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

28mΩ

Typical Gate Charge Qg @ Vgs

8.5nC

Maximum Power Dissipation Pd

40W

Maximum Gate Source Voltage Vgs

10V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Width

3.1mm

Height

0.9mm

Standards/Approvals

RoHS Compliant

Automotive Standard

AEC-Q101

The ROHM Power MOSFET delivers high-performance N-channel switching for automotive power management. This robust device is engineered for ADAS and infotainment systems, ensuring efficient performance in demanding vehicle environments up to 150°C.

Drain to source voltage of 40 V

Continuous drain current of 12 A

17.4 mOhm typical on-resistance at 10 V

High power dissipation of 40 W

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