Infineon CoolSiC N channel-Channel Power MOSFET, 26.6 A, 650 V Enhancement, 4-Pin TO-247-4 IMZA65R075M2HXKSA1
- RS庫存編號:
- 762-920
- 製造零件編號:
- IMZA65R075M2HXKSA1
- 製造商:
- Infineon
N
可享批量折扣
小計（1 件）*
TWD201.00
(不含稅)
TWD211.05
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月15日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD201.00 |
| 10 - 49 | TWD163.00 |
| 50 - 99 | TWD125.00 |
| 100 + | TWD100.00 |
* 參考價格
- RS庫存編號:
- 762-920
- 製造零件編號:
- IMZA65R075M2HXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 26.6A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247-4 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 111W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14.9nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Length | 21.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 26.6A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247-4 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 111W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14.9nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Length 21.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.
Ultra‑low switching losses
Enhances system robustness and reliability
Facilitates great ease of use and integration
Reduces the size, weight and bill of materials of the systems
相關連結
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247-4
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247-4 IMZA65R107M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247