Vishay TrenchFET Dual N-Channel MOSFET, 23.5 A, 60 V Enhancement, 8-Pin SO-8L SQJ968EP-T1_BE3
- RS庫存編號:
- 736-655
- 製造零件編號:
- SQJ968EP-T1_BE3
- 製造商:
- Vishay
N
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- 從 2026年12月07日 發貨
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|---|---|
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| 100 + | TWD15.00 |
* 參考價格
- RS庫存編號:
- 736-655
- 製造零件編號:
- SQJ968EP-T1_BE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Dual N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8L | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.134Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 42W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 18.5nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.13mm | |
| Height | 1.07mm | |
| Width | 6.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Dual N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8L | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.134Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 42W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 18.5nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Length 5.13mm | ||
Height 1.07mm | ||
Width 6.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
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