Vishay TrenchFET Dual N-Channel MOSFET, 23.5 A, 60 V Enhancement, 8-Pin SO-8L SQJ968EP-T1_BE3
- RS庫存編號:
- 736-655
- 製造零件編號:
- SQJ968EP-T1_BE3
- 製造商:
- Vishay
N
可享批量折扣
小計（1 組，共 1 件）*
TWD45.00
(不含稅)
TWD47.25
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年11月16日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 9 | TWD45.00 |
| 10 - 24 | TWD30.00 |
| 25 - 99 | TWD16.00 |
| 100 + | TWD15.00 |
* 參考價格
- RS庫存編號:
- 736-655
- 製造零件編號:
- SQJ968EP-T1_BE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 23.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8L | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.134Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18.5nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 42W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.13mm | |
| Height | 1.07mm | |
| Standards/Approvals | RoHS | |
| Width | 6.15mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 23.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8L | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.134Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18.5nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 42W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 5.13mm | ||
Height 1.07mm | ||
Standards/Approvals RoHS | ||
Width 6.15mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
相關連結
- Vishay SQ4946CEY Dual N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SQ4946CEY-T1_BE3
- Vishay TrenchFET P-Channel MOSFET -80 V Enhancement, 4-Pin PowerPAK SO-8L SQJ181ELP-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8L SQJ420EP-T1_JE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET N channel-Channel MOSFET 150 V Enhancement, 4-Pin PowerPAK SO-8L SQJ742ELP-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L SQJ742EP-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SO-8L SQJ746EP-T2_GE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 Si7454FDP-T1-RE3