Vishay SIZF5302DT Dual N-Channel MOSFET, 100 A, 30 V Enhancement, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-UE3
- RS庫存編號:
- 736-358
- 製造零件編號:
- SIZF5302DT-T1-UE3
- 製造商:
- Vishay
N
可享批量折扣
小計（1 組，共 1 件）*
TWD47.00
(不含稅)
TWD49.35
(含稅)
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|---|---|
| 1 - 9 | TWD47.00 |
| 10 - 24 | TWD30.00 |
| 25 + | TWD16.00 |
* 參考價格
- RS庫存編號:
- 736-358
- 製造零件編號:
- SIZF5302DT-T1-UE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Dual N-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIZF5302DT | |
| Package Type | PowerPAIR 3 x 3FS | |
| Mount Type | Surface Mount | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.0032Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 48.1W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14.8nC | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Dual N-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIZF5302DT | ||
Package Type PowerPAIR 3 x 3FS | ||
Mount Type Surface Mount | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.0032Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 48.1W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14.8nC | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Width 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Dual N-channel MOSFET, efficiently managing power in various applications such as synchronous buck and computer peripherals.
Utilises TrenchFET Gen V technology for enhanced efficiency
Features dual N-channel architecture that optimises heat dissipation
Capable of handling a maximum continuous drain current of 28.1A at 25°C
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