Vishay SQ3583CEV N channel, P-Channel MOSFET, 4.7 A, 20 V Enhancement, 6-Pin TSOP-6 SQ3583CEV-T1_GE3

N
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小計(1 組,共 1 件)*

TWD17.00

(不含稅)

TWD17.85

(含稅)

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  • 2026年11月16日 發貨
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膠帶
每膠帶
1 - 24TWD17.00
25 - 99TWD11.00
100 +TWD6.00

* 參考價格

RS庫存編號:
736-343
製造零件編號:
SQ3583CEV-T1_GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N channel, P-Channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

20V

Package Type

TSOP-6

Series

SQ3583CEV

Mount Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance Rds

0.077Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

12V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

6nC

Maximum Power Dissipation Pd

1.67W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
DE
The Vishay Dual MOSFET designed for high-reliability applications. This component utilizes TrenchFET technology to provide efficient power management in a Compact TSOP-6 package.

Qualified for automotive use according to AEC-Q101 standards

Undergoes 100 % Rg and UIS testing to ensure robust performance

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