STMicroelectronics STS N channel-Channel Power MOSFET, 10 A, 30 V Enhancement, 8-Pin SO-8 STS10N3LH5
- RS庫存編號:
- 719-622
- 製造零件編號:
- STS10N3LH5
- 製造商:
- STMicroelectronics
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD16.00
(不含稅)
TWD16.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 300 件從 2026年3月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 24 | TWD16.00 |
| 25 - 99 | TWD14.00 |
| 100 - 499 | TWD13.00 |
| 500 - 999 | TWD11.00 |
| 1000 + | TWD10.00 |
* 參考價格
- RS庫存編號:
- 719-622
- 製造零件編號:
- STS10N3LH5
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | STS | |
| Package Type | SO-8 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.021Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±22 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Width | 4 mm | |
| Height | 1.75mm | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series STS | ||
Package Type SO-8 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.021Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±22 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Width 4 mm | ||
Height 1.75mm | ||
The STMicroelectronics STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.
Extremely low on-resistance RDS(on)
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
相關連結
- STMicroelectronics STS N channel-Channel Power MOSFET 30 V Enhancement, 8-Pin SO-8 STS10N3LH5
- STMicroelectronics Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- STMicroelectronics Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 STS7NF60L
- STMicroelectronics STGAP2 Type N-Channel MOSFET 1700 V Enhancement, 8-Pin SO-8
- STMicroelectronics SuperMESH Dual N-Channel MOSFET 450 V Enhancement, 8-Pin SO-8 STS1DNC45
- STMicroelectronics STGAP2 Type N-Channel MOSFET 1700 V Enhancement, 8-Pin SO-8 STGAP2SICSNC
- Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8
- Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8 IRF7341GTRPBF