DiodesZetex DMP10H4D2S P-Channel MOSFET, -0.27 A, -100 V Enhancement, 3-Pin SOT-23 DMP10H4D2S-7
- RS庫存編號:
- 719-512
- 製造零件編號:
- DMP10H4D2S-7
- 製造商:
- DiodesZetex
可享批量折扣
小計（1 卷，共 3000 件）*
TWD8,700.00
(不含稅)
TWD9,120.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月17日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD2.90 | TWD8,700.00 |
| 15000 + | TWD2.90 | TWD8,700.00 |
* 參考價格
- RS庫存編號:
- 719-512
- 製造零件編號:
- DMP10H4D2S-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -0.27A | |
| Maximum Drain Source Voltage Vds | -100V | |
| Package Type | SOT-23 | |
| Series | DMP10H4D2S | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Forward Voltage Vf | -1.3V | |
| Maximum Power Dissipation Pd | 0.44W | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Height | 1.15mm | |
| Automotive Standard | AEC-Q | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -0.27A | ||
Maximum Drain Source Voltage Vds -100V | ||
Package Type SOT-23 | ||
Series DMP10H4D2S | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Forward Voltage Vf -1.3V | ||
Maximum Power Dissipation Pd 0.44W | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Height 1.15mm | ||
Automotive Standard AEC-Q | ||
- COO (Country of Origin):
- CN
The DiodesZetex P Channel enhancement mode MOSFET designed for high-efficiency power-management applications. It excels in minimising on-state resistance while providing superior switching performance, making it suitable for a range of applications including automotive systems and battery-powered devices. With its small surface-mount package and robust characteristics, it supports efficient operation in various electronic configurations, ensuring reliable functionality even in challenging environments.
Low gate threshold voltage enables efficient control for power management
Low input capacitance allows for Faster switching speeds, optimising performance
ESD protected up to 2kV enhances device reliability under stress conditions
Lead-free and RoHS compliant, ensuring environmental safety and compliance
Qualified to JEDEC standards, demonstrating high reliability for automotive applications
Moisture sensitivity level 1, offering robustness during handling and assembly
Low on resistance values at specified gate-source voltages contribute to energy efficiency
Ideal for automotive-compliant applications, reinforcing its versatile functionality
相關連結
- DiodesZetex DMP10H4D2S P-Channel MOSFET -100 V Enhancement, 3-Pin SOT-23 DMP10H4D2S-7
- DiodesZetex Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type P-Channel MOSFET 60 V Enhancement, 6-Pin SOT-23
- DiodesZetex Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type P-Channel MOSFET 200 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type P-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- DiodesZetex Type P-Channel MOSFET 250 V Enhancement, 6-Pin SOT-23
- DiodesZetex Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23