Vishay SQJA36EP Type N-Channel MOSFET, 350 A, 40 V Enhancement, 4-Pin PowerPAK SQJA36EP-T1_JE3
- RS庫存編號:
- 653-069
- 製造零件編號:
- SQJA36EP-T1_JE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 1 件）*
TWD52.00
(不含稅)
TWD54.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 24 | TWD52.00 |
| 25 - 99 | TWD50.00 |
| 100 - 499 | TWD49.00 |
| 500 - 999 | TWD42.00 |
| 1000 + | TWD39.00 |
* 參考價格
- RS庫存編號:
- 653-069
- 製造零件編號:
- SQJA36EP-T1_JE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 350A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQJA36EP | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.00124Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Length | 6.25mm | |
| Height | 1.1mm | |
| Width | 6.25 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 350A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQJA36EP | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.00124Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Length 6.25mm | ||
Height 1.1mm | ||
Width 6.25 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive-grade N-channel MOSFET built for high-efficiency switching in power-dense environments. It supports up to 40 V drain-source voltage and handles continuous drain currents up to 350 A, making it Ideal for demanding automotive applications. Packaged in PowerPAK SO-8L, it features TrenchFET Gen IV technology for ultra-low RDS(on) and optimized switching performance.
AEC Q101 qualified
Pb Free
Halogen free
RoHS compliant
相關連結
- Vishay SQJA36EP Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK SQJA36EP-T1_JE3
- Vishay SQJA36EP Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SQJA36EP-T1_GE3
- Vishay SQJA36EP Type N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8
- Vishay SQ3426CE Type N-Channel Single MOSFETs 60 V Enhancement, 8-Pin PowerPAK SQ7414CENW-T1_JE3
- Vishay SQ3426CE Type N-Channel Single MOSFETs 60 V Enhancement, 8-Pin PowerPAK
- Vishay Dual N Channel Mosfet TrenchFET 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212
- Vishay SQJQ142E Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK (8x8L)
- Vishay SQJQ148E Type N-Channel MOSFET 40 V Enhancement, 4-Pin PowerPAK (8x8L)