Infineon IMB Type N-Channel MOSFET, 189 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R008M2HXTMA1
- RS庫存編號:
- 349-092
- 製造零件編號:
- IMBG120R008M2HXTMA1
- 製造商:
- Infineon
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小計（1 件）*
TWD2,055.00
(不含稅)
TWD2,157.75
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,000 件從 2026年3月04日 起發貨
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|---|---|
| 1 - 9 | TWD2,055.00 |
| 10 - 99 | TWD1,850.00 |
| 100 + | TWD1,706.00 |
* 參考價格
- RS庫存編號:
- 349-092
- 製造零件編號:
- IMBG120R008M2HXTMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 189A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PG-TO263-7 | |
| Series | IMB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 800W | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Height | 4.5mm | |
| Width | 10.2 mm | |
| Length | 15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 189A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PG-TO263-7 | ||
Series IMB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 800W | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Height 4.5mm | ||
Width 10.2 mm | ||
Length 15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.
Robust body diode for hard commutation
The .XT interconnection technology for best in class thermal performance
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
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