Infineon CoolSiC Type N-Channel MOSFET, 93 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R015M2HXKSA1
- RS庫存編號:
- 349-062
- 製造零件編號:
- IMW65R015M2HXKSA1
- 製造商:
- Infineon
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小計（1 件）*
TWD875.00
(不含稅)
TWD918.75
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 240 件從 2026年1月19日 起發貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD875.00 |
| 10 - 99 | TWD788.00 |
| 100 + | TWD727.00 |
* 參考價格
- RS庫存編號:
- 349-062
- 製造零件編號:
- IMW65R015M2HXKSA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 93A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolSiC | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 341W | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 93A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolSiC | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 341W | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and excellent ease of use. This MOSFET is designed to enable cost effective, highly efficient, and simplified designs, addressing the ever-growing demands of modern power systems and markets. It is an ideal solution for achieving high system efficiency in a wide range of applications, delivering reliable performance and superior functionality.
Ultra low switching losses
Robust against parasitic turn on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
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- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247