Infineon OptiMOS 6 N-Channel MOSFET, 597 A, 40 V, 9-Pin PG-WHTFN-9 IQD005N04NM6CGSCATMA1
- RS庫存編號:
- 348-878
- 製造零件編號:
- IQD005N04NM6CGSCATMA1
- 製造商:
- Infineon
不可供應
RS 不再對此產品進貨。
- RS庫存編號:
- 348-878
- 製造零件編號:
- IQD005N04NM6CGSCATMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 597 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | PG-WHTFN-9 | |
| Series | OptiMOS 6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 9 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 597 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type PG-WHTFN-9 | ||
Series OptiMOS 6 | ||
Mounting Type Surface Mount | ||
Pin Count 9 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon Power MOSFET comes with a low RDS(on) of 0.47 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.
Minimized conduction losses
Fast switching
Reduced voltage overshoot
Fast switching
Reduced voltage overshoot