Infineon OptiMOS 5 Type N, Type N-Channel MOSFET, 700 A, 30 V Enhancement, 9-Pin PG-WHTFN-9 IQDH35N03LM5CGSCATMA1
- RS庫存編號:
- 348-875
- 製造零件編號:
- IQDH35N03LM5CGSCATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 2 件）*
TWD322.00
(不含稅)
TWD338.10
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 18 | TWD161.00 | TWD322.00 |
| 20 - 198 | TWD145.00 | TWD290.00 |
| 200 - 998 | TWD133.50 | TWD267.00 |
| 1000 - 1998 | TWD124.00 | TWD248.00 |
| 2000 + | TWD111.00 | TWD222.00 |
* 參考價格
- RS庫存編號:
- 348-875
- 製造零件編號:
- IQDH35N03LM5CGSCATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type N | |
| Maximum Continuous Drain Current Id | 700A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS 5 | |
| Package Type | PG-WHTFN-9 | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.35mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 278W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N, Type N | ||
Maximum Continuous Drain Current Id 700A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS 5 | ||
Package Type PG-WHTFN-9 | ||
Mount Type Surface, Surface Mount | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.35mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 278W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon MOSFET comes with a low RDS(on) of 0.35 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.
Minimized conduction losses
Fast switching
Reduced voltage overshoot