Infineon OptiMOS 5 N-Channel MOSFET, 789 A, 25 V, 9-Pin PG-WHTFN-9 IQDH29NE2LM5CGSCATMA1
- RS庫存編號:
- 348-874
- 製造零件編號:
- IQDH29NE2LM5CGSCATMA1
- 製造商:
- Infineon
不可供應
RS 不再對此產品進貨。
- RS庫存編號:
- 348-874
- 製造零件編號:
- IQDH29NE2LM5CGSCATMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 789 A | |
| Maximum Drain Source Voltage | 25 V | |
| Package Type | PG-WHTFN-9 | |
| Series | OptiMOS 5 | |
| Mounting Type | Surface Mount | |
| Pin Count | 9 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 789 A | ||
Maximum Drain Source Voltage 25 V | ||
Package Type PG-WHTFN-9 | ||
Series OptiMOS 5 | ||
Mounting Type Surface Mount | ||
Pin Count 9 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon Power MOSFET comes with industry’s lowest RDS(on) of 0.29 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.
Minimized conduction losses
Fast switching
Reduced voltage overshoot
Fast switching
Reduced voltage overshoot