STMicroelectronics PD5 Type N-Channel MOSFET, 2.5 A, 65 V Enhancement, 10-Pin PowerSO-10RF PD57018-E

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包裝方式：
RS庫存編號:
330-355
製造零件編號:
PD57018-E
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

65V

Package Type

PowerSO-10RF

Series

PD5

Mount Type

Surface

Pin Count

10

Maximum Drain Source Resistance Rds

0.76Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

31.7W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

65°C

Maximum Operating Temperature

165°C

Standards/Approvals

J-STD-020B

Height

3.6mm

Length

14.35mm

Width

9.6 mm

Automotive Standard

No

COO (Country of Origin):
MY
The STMicroelectronics RF POWER transistor is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294).

Excellent thermal stability

Common source configuration

New RF plastic package

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