Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET, 86 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC073N12LM6ATMA1
- RS庫存編號:
- 285-048P
- 製造零件編號:
- ISC073N12LM6ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
暫時無法供應
抱歉，我們不知道何時會到貨。
- RS庫存編號:
- 285-048P
- 製造零件編號:
- ISC073N12LM6ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 86A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | OptiMOS 6 Power Transistor | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 86A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series OptiMOS 6 Power Transistor | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET is an Advanced N channel power transistor that excels in high frequency switching applications. Designed with innovative OptiMOS 6 technology, it delivers exceptional efficiency and performance. With a low on resistance and a high avalanche energy rating, this component is optimised for demanding industrial applications and ensures reliable operation even in challenging thermal environments. Its Compact PG TDSON 8 package further enhances its usability, making integration into various designs straightforward. The transistor operates seamlessly across a wide temperature range, facilitating versatility in numerous applications.
N channel design for enhanced performance
Optimised for high frequency switching
Low on resistance boosts energy efficiency
High avalanche rating ensures reliability
Compact package saves design space
RoHS compliant for sustainability
MSL 1 for easy soldering
Internal body diode improves functionality