Infineon 650V CoolMOS SiC N-Channel MOSFET, 85 A, 650 V, 22-Pin PG-HDSOP-22 IPDQ65R029CFD7XTMA1

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RS庫存編號:
284-870
製造零件編號:
IPDQ65R029CFD7XTMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Maximum Continuous Drain Current

85 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HDSOP-22

Series

650V CoolMOS

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET is designed to meet the demanding requirements of high efficiency switching applications. It incorporates cutting edge technology from the coolmos CFD7 series, enabling superior performance in various scenarios, including resonant and phase shift full bridge topologies. With a breakdown voltage rating of 650V, this device optimises efficiency and thermal management, making it suitable for modern power supply systems. Its fast body diode technology delivers robust operation, ensuring that it can handle high transient loads with ease. Whether used in server applications, telecom systems, or renewable energy solutions like EV charging and solar power, this MOSFET is an excellent choice for manufacturers looking to elevate their product offerings.

Ultra fast body diode ensures rapid response
Low thermal resistance optimises heat dissipation
Enhanced ruggedness ensures reliable operation
Improved switching performance boosts efficiency
Tailored for high power density applications
Comprehensive JEDEC qualification ensures quality