Infineon 650V CoolMOS SiC N-Channel MOSFET, 136 A, 650 V, 22-Pin PG-HDSOP-22 IPDQ65R017CFD7XTMA1

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RS庫存編號:
284-868
製造零件編號:
IPDQ65R017CFD7XTMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Maximum Continuous Drain Current

136 A

Maximum Drain Source Voltage

650 V

Package Type

PG-HDSOP-22

Series

650V CoolMOS

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features a CoolMOS CFD7 series which is engineered for high efficiency in resonant switching applications. With a breakdown voltage of 650V, the product excels in thermal performance, making it an ideal choice for demanding environments such as server and telecom systems, EV charging, and solar applications. Its superior hard commutation capabilities and rapid switching attributes provide reliability and safety in critical applications. The device aims to enhance power density while ensuring exceptional performance in light load conditions. As such, it serves as a potent solution for contemporary energy efficient designs.

Ultra fast body diode boosts switching performance
Optimised for phase shift full bridge applications
High thermal robustness enhances overall efficiency
Flexible design with low RDS temperature dependency
Supports higher bus voltages for increased power density
Resilient against hard commutation for reliable operation
Fully qualified per JEDEC standards