Infineon OptiMOS SiC N-Channel MOSFET, 85 A, 100 V, 9-Pin PG-WHTFN-9 IQE065N10NM5CGSCATMA1
- RS庫存編號:
- 284-776
- 製造零件編號:
- IQE065N10NM5CGSCATMA1
- 製造商:
- Infineon
不可供應
RS 不再對此產品進貨。
- RS庫存編號:
- 284-776
- 製造零件編號:
- IQE065N10NM5CGSCATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 85 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | PG-WHTFN-9 | |
| Series | OptiMOS | |
| Mounting Type | Surface Mount | |
| Pin Count | 9 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 85 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PG-WHTFN-9 | ||
Series OptiMOS | ||
Mounting Type Surface Mount | ||
Pin Count 9 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered for exceptional performance in synchronous rectification applications, delivering high efficiency and reliability. The advanced MOSFET technology makes it an ideal choice for demanding power supply designs, ensuring optimal thermal management and reduced energy loss. Designed to operate at 100V, this transistor exhibits impressive robustness through 100% avalanche testing, offering peace of mind for industrial applications.
Optimised for switch mode power supplies
N channel for enhanced switching
Superior thermal resistance ensures reliability
Pb free lead plating for environmental safety
Halogen free materials meet IEC standards
N channel for enhanced switching
Superior thermal resistance ensures reliability
Pb free lead plating for environmental safety
Halogen free materials meet IEC standards