Infineon 600V CoolMOS SiC N-Channel MOSFET, 52 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R045CFD7XTMA1

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RS庫存編號:
284-748
製造零件編號:
IPDQ60R045CFD7XTMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

600 V

Package Type

PG-HDSOP-22

Series

600V CoolMOS

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features a 600V CoolMOS CFD7 Power Transistor represents a breakthrough in high voltage performance and energy efficiency. Specially designed to excel in soft switching applications, this power semiconductor incorporates advanced super junction technology, ensuring superior efficiency in resonant topologies. The CoolMOS CFD7 is optimised not just for energy savings but also for ease of integration, making it an ideal solution for demanding applications in sectors ranging from telecom to electric vehicle charging. Its robust body diode complements its functionality, safeguarding against hard commutation while maintaining high reliability. This power transistor ensures it meets the stringent requirements of industrial applications, making it a trustworthy component for cutting edge designs.

Ultra fast body diode boosts commutation
Best in class efficiency for high performance designs
Minimised thermal resistance ensures effective heat management
Reduced gate charge lowers switching losses
Designed for easy integration into topologies
Rugged against reverse recovery transients
Compliant with JEDEC standards for industrial use
Compact PG HDSOP 22 package enables versatile PCB placement