Infineon 600V CoolMOS SiC N-Channel MOSFET, 90 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R025CFD7XTMA1

查看所有MOSFETs
不可供應
RS 不再對此產品進貨。
包裝方式：
RS庫存編號:
284-743
製造零件編號:
IPDQ60R025CFD7XTMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

600 V

Series

600V CoolMOS

Package Type

PG-HDSOP-22

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features a CoolMOS CFD7 Power Transistor sets a new benchmark in high voltage power management, meticulously engineered for phase shift full bridge and LLC applications. Its innovative super junction technology ensures exceptional efficiency in resonant topologies, perfectly positioning it for soft switching environments. With a robust design that combines ultra fast body diode performance with minimal gate charge, this power transistor significantly enhances system reliability and performance. Ideal for diverse applications including server infrastructure, telecom systems, and electric vehicle charging, it exemplifies the pinnacle of efficiency and ruggedness. The CFD7 series heralds a sophisticated approach to power management, not just meeting but exceeding modern demands for energy efficiency and operational robustness.

Ultra fast body diode optimises switching
Low gate charge ensures high efficiency
Best in class reverse recovery improves performance
Rugged design withstands di/dt stress
Ideal for high power density solutions
Qualified per JEDEC for industrial use
Streamlined implementation simplifies design processes