Infineon OptiMOS Type N-Channel MOSFET, 381 A, 40 V Enhancement, 8-Pin PG-WSON-8 BSC009N04LSSCATMA1
- RS庫存編號:
- 284-697
- 製造零件編號:
- BSC009N04LSSCATMA1
- 製造商:
- Infineon
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TWD449.00
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TWD471.45
(含稅)
訂單超過 $1,300.00 免費送貨
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- 從 2027年8月16日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD89.80 | TWD449.00 |
| 50 - 95 | TWD85.40 | TWD427.00 |
| 100 - 495 | TWD79.00 | TWD395.00 |
| 500 - 995 | TWD72.80 | TWD364.00 |
| 1000 + | TWD70.00 | TWD350.00 |
* 參考價格
- RS庫存編號:
- 284-697
- 製造零件編號:
- BSC009N04LSSCATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | PG-WSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 188W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type PG-WSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 188W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC009N04LSSCATMA1
This MOSFET is a high-current N-channel switch designed for surface-mount power conversion and control applications. It operates across a wide ambient range and is intended for systems that demand substantial current handling and compact mounting using a PG-WSON-8 package.
Features and Benefits:
• 381A continuous drain current enables high-load switching capability
• 40V drain-source rating supports medium-voltage power stages
• 1V forward voltage reduces conduction losses under load
• 188W maximum dissipation permits substantial power handling
• Type N enhancement mode provides standard MOSFET switching behaviour
• 20V gate-source tolerance allows robust gate-drive margins
• 40V drain-source rating supports medium-voltage power stages
• 1V forward voltage reduces conduction losses under load
• 188W maximum dissipation permits substantial power handling
• Type N enhancement mode provides standard MOSFET switching behaviour
• 20V gate-source tolerance allows robust gate-drive margins
Applications
• Suitable for high-current DC-DC converter stages
• Ideal for motor-driver half-bridge configurations
• Used with server power-supply switching networks
• Can be used for telecom power distribution modules
• Appropriate for industrial inverter intermediate stages
• Ideal for motor-driver half-bridge configurations
• Used with server power-supply switching networks
• Can be used for telecom power distribution modules
• Appropriate for industrial inverter intermediate stages
What temperature extremes can the device endure in operation?
It maintains functionality from -55 °C up to 175 °C, allowing use in harsh thermal environments and elevated-junction designs.
What mounting method does the device require on a PCB?
The component is supplied in a PG-WSON-8 package intended for surface mounting to enable compact board layouts and low-inductance connections.
How does the gate-drive voltage affect switching?
The gate-source voltage range permits up to 20V, giving margin for fast switching with common gate-drive voltages while avoiding overdrive that could stress the gate.
Is the device suitable where environmentally restricted materials are required?
It complies with RoHS directives, meeting restricted-substance requirements for material selection.
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