Infineon OptiMOS Type N-Channel MOSFET, 331 A, 120 V Enhancement, 16-Pin PG-HDSOP-16 IPTC017N12NM6ATMA1

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RS庫存編號:
284-692
製造零件編號:
IPTC017N12NM6ATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

331A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS

Package Type

PG-HDSOP-16

Mount Type

Surface

Pin Count

16

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

395W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET features an OptiMOS 6 Power Transistor is engineered for exceptional performance in high frequency switching applications. With a robust design, this MOSFET transistor features an N channel configuration that ensures minimal on state resistance and optimised gate charge characteristics, making it Ideal for modern electronic circuits. Its high avalanche energy rating and wide operating temperature range up to 175°C further enhance reliability across diverse industrial applications. Encased in a PG HDSOP 16 package, this product combines Compact sizing with high thermal performance, making it a valuable choice for engineers seeking reliable and efficient solutions for power management in demanding environments.

N channel configuration for superior control

Very low on resistance reduces energy losses

Optimised gate charge for Faster switching

High avalanche energy boosts circuit robustness

Reliable operation at elevated temperatures

Compact PG HDSOP 16 package maximises space

Pb free lead plating for eco friendly designs

Halogen free promoting sustainability in electronics

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