Name: Infineon FZ1200 Type P-Channel MOSFET, 1.2 kA, 4500 V Depletion Tray FZ1200R45HL4S7BPSA1
Brand: Infineon
SKU: 277-199
Price: 94125.15 TWD
Availability: Discontinued

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透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.2kA
	Maximum Drain Source Voltage Vds	4500V
	Package Type	Tray
	Series	FZ1200
	Mount Type	Chassis
	Channel Mode	Depletion
	Maximum Power Dissipation Pd	2400kW
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	2.95V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC 60749, IEC 60068, IEC 60747
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.2kA
	Maximum Drain Source Voltage Vds 4500V
	Package Type Tray
	Series FZ1200
	Mount Type Chassis
	Channel Mode Depletion
	Maximum Power Dissipation Pd 2400kW
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 2.95V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC 60749, IEC 60068, IEC 60747
	Automotive Standard No

Datasheet - FZ1200R45HL4S7BPSA1

COO (Country of Origin):: HU

The Infineon IGBT Module is a IHV-B 4500 V, 1200 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate. The best solution for your industry applications.

High power density

For compact inverter designs

Standardized housing

Infineon FZ1200 Type P-Channel MOSFET, 1.2 kA, 4500 V Depletion Tray FZ1200R45HL4S7BPSA1

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