onsemi NXH Type N-Channel MOSFET, 76 A, 40 V Enhancement, 56-Pin Power 56 FDMS8333LN
- RS庫存編號:
- 277-063
- 製造零件編號:
- FDMS8333LN
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 組，共 10 件）*
TWD254.00
(不含稅)
TWD266.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 10 - 90 | TWD25.40 | TWD254.00 |
| 100 - 240 | TWD24.10 | TWD241.00 |
| 250 - 490 | TWD22.30 | TWD223.00 |
| 500 - 990 | TWD20.50 | TWD205.00 |
| 1000 + | TWD19.80 | TWD198.00 |
* 參考價格
- RS庫存編號:
- 277-063
- 製造零件編號:
- FDMS8333LN
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NXH | |
| Package Type | Power 56 | |
| Mount Type | Surface | |
| Pin Count | 56 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 69W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.15mm | |
| Standards/Approvals | RoHS | |
| Height | 1.1mm | |
| Width | 5.1 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NXH | ||
Package Type Power 56 | ||
Mount Type Surface | ||
Pin Count 56 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 69W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.15mm | ||
Standards/Approvals RoHS | ||
Height 1.1mm | ||
Width 5.1 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor N Channel MOSFET has been designed specifically to improve the overall efficiency and to minimise switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimised for low gate charge, low RDS(ON), fast switching speed and body and body diode reverse recovery performance.
100% UIL tested
MSL 1 robust package design
RoHS compliant
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