onsemi NXH Dual Silicon N/P-Channel MOSFET, 800 A, 1200 V, 11-Pin PIM11 NXH800H120L7QDSG
- RS庫存編號:
- 277-059P
- 製造零件編號:
- NXH800H120L7QDSG
- 製造商:
- onsemi
小計 1 件 (以盤裝提供)*
TWD9,943.00
(不含稅)
TWD10,440.15
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 24 件準備從其他地點送貨
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單位 | 每單位 |
|---|---|
| 1 + | TWD9,943.00 |
* 參考價格
- RS庫存編號:
- 277-059P
- 製造零件編號:
- NXH800H120L7QDSG
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 800 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | PIM11 | |
| Series | NXH | |
| Mounting Type | Through Hole | |
| Pin Count | 11 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 2 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 800 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type PIM11 | ||
Series NXH | ||
Mounting Type Through Hole | ||
Pin Count 11 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 2 | ||
- COO (Country of Origin):
- CN
The ON Semiconductor Half Bridge IGBT Power Module features integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes, providing lower conduction and switching losses. This design enables high efficiency and superior reliability. The module is configured as a 1200V, 800A 2-in-1 half-bridge, making it ideal for applications that require robust performance and optimal power conversion efficiency.
NTC thermistor
Isolated base plate
Solderable pins
Low inductive layout
Pb free
Isolated base plate
Solderable pins
Low inductive layout
Pb free