Nexperia NSF030120L3A0 Type N-Channel MOSFET, 48 A, 1200 V Enhancement, 3-Pin TO-247 NSF030120L3A0Q
- RS庫存編號:
- 219-449
- 製造零件編號:
- NSF030120L3A0Q
- 製造商:
- Nexperia
此圖片僅供參考,請參閲產品詳細資訊及規格
小計(1 管,共 450 件)*
TWD364,950.00
(不含稅)
TWD383,197.50
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月27日 發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 450 + | TWD811.00 | TWD364,950.00 |
* 參考價格
- RS庫存編號:
- 219-449
- 製造零件編號:
- NSF030120L3A0Q
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NSF030120L3A0 | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 306W | |
| Typical Gate Charge Qg @ Vgs | 113nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NSF030120L3A0 | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 306W | ||
Typical Gate Charge Qg @ Vgs 113nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
- COO (Country of Origin):
- CN
The Nexperia SiC Power MOSFET comes in a Compact 3-pin TO-247-3 plastic package for through hole mounting on PCBs. Its excellent RDS(on) temperature stability and fast switching speed make it Ideal for high-power, high-voltage industrial applications, including electric vehicle charging infrastructure, photovoltaic inverters, and motor drives.
Fast reverse recovery
Fast switching speed
Temperature independent turn off switching losses
Very fast and robust intrinsic body diode
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