STMicroelectronics STB Type N-Channel MOSFET, 30 A, 600 V Enhancement, 2-Pin TO-263 STB45N60DM6

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RS庫存編號:
214-850
製造零件編號:
STB45N60DM6
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

600V

Series

STB

Package Type

TO-263

Mount Type

Surface

Pin Count

2

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

44nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

210W

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

10.4 mm

Height

4.6mm

Length

15.85mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics High-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Extremely high dv/dt ruggedness

Zener protected

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