IXYS HiperFET, Polar N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

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包裝方式：
RS庫存編號:
194-057
製造零件編號:
IXFP10N80P
製造商:
IXYS
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品牌

IXYS

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220

Series

HiperFET, Polar

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Width

4.83mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Number of Elements per Chip

1

Length

10.66mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

9.15mm

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

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MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS