STMicroelectronics MDmesh II Type N-Channel MOSFET, 11 A, 600 V Enhancement, 3-Pin TO-252 STD13NM60N
- RS庫存編號:
- 151-952
- 製造零件編號:
- STD13NM60N
- 製造商:
- STMicroelectronics
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小計（1 組，共 5 件）*
TWD328.00
(不含稅)
TWD344.40
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 2,260 件從 2025年12月31日 起發貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 5 - 45 | TWD65.60 | TWD328.00 |
| 50 - 95 | TWD62.20 | TWD311.00 |
| 100 - 495 | TWD57.60 | TWD288.00 |
| 500 - 995 | TWD53.00 | TWD265.00 |
| 1000 + | TWD51.00 | TWD255.00 |
* 參考價格
- RS庫存編號:
- 151-952
- 製造零件編號:
- STD13NM60N
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | MDmesh II | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.36Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.4mm | |
| Width | 6.6 mm | |
| Standards/Approvals | RoHS | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series MDmesh II | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.36Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Height 2.4mm | ||
Width 6.6 mm | ||
Standards/Approvals RoHS | ||
Length 10.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
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