STMicroelectronics MDmesh K5 Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin TO-252 STD6N95K5
- RS庫存編號:
- 151-926
- 製造零件編號:
- STD6N95K5
- 製造商:
- STMicroelectronics
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小計（1 組，共 5 件）*
TWD461.00
(不含稅)
TWD484.05
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 2,495 件從 2026年1月05日 起發貨
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 5 - 45 | TWD92.20 | TWD461.00 |
| 50 - 95 | TWD87.60 | TWD438.00 |
| 100 - 495 | TWD81.20 | TWD406.00 |
| 500 - 995 | TWD74.60 | TWD373.00 |
| 1000 + | TWD71.80 | TWD359.00 |
* 參考價格
- RS庫存編號:
- 151-926
- 製造零件編號:
- STD6N95K5
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | TO-252 | |
| Series | MDmesh K5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.25Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.6nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Width | 6.6 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type TO-252 | ||
Series MDmesh K5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.25Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.6nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 2.4mm | ||
Length 10.1mm | ||
Width 6.6 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on resistance and ultra low gate charge for applications requiring superior power density and high efficiency.
Industry’s lowest RDS(on) x area
Industry’s best FoM
Ultra low gate charge
100% avalanche tested
Zener protected
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