STMicroelectronics SuperMESH Type N-Channel MOSFET, 85 A, 1000 V Enhancement, 3-Pin TO-252 STD2NK100Z
- RS庫存編號:
- 151-902
- 製造零件編號:
- STD2NK100Z
- 製造商:
- STMicroelectronics
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小計（1 組，共 10 件）*
TWD308.00
(不含稅)
TWD323.40
(含稅)
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單位 | 每單位 | 每膠帶* |
|---|---|---|
| 10 - 90 | TWD30.80 | TWD308.00 |
| 100 - 240 | TWD29.30 | TWD293.00 |
| 250 - 490 | TWD27.10 | TWD271.00 |
| 500 - 990 | TWD25.00 | TWD250.00 |
| 1000 + | TWD24.10 | TWD241.00 |
* 參考價格
- RS庫存編號:
- 151-902
- 製造零件編號:
- STD2NK100Z
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 85A | |
| Maximum Drain Source Voltage Vds | 1000V | |
| Package Type | TO-252 | |
| Series | SuperMESH | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Power Dissipation Pd | 70W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 159°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 85A | ||
Maximum Drain Source Voltage Vds 1000V | ||
Package Type TO-252 | ||
Series SuperMESH | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Power Dissipation Pd 70W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 159°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Gate charge minimized
Very low intrinsic capacitance
Zener-protected
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