onsemi, Single Type N-Channel JFET-Channel JFET, 30 V 0.3 to 1.5 mA, 3-Pin SOT-23
- RS庫存編號:
- 761-3688P
- 製造零件編號:
- MMBFJ201
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計 750 件 (以卷裝提供)*
TWD5,400.00
(不含稅)
TWD5,670.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 5,250 件從 2026年3月18日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 750 - 1475 | TWD7.20 |
| 1500 + | TWD7.20 |
* 參考價格
- RS庫存編號:
- 761-3688P
- 製造零件編號:
- MMBFJ201
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | JFET | |
| Sub Type | JFET | |
| Maximum Drain Source Voltage Vds | 30V | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-23 | |
| Drain Source Current Ids | 0.3 to 1.5 mA | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 3 | |
| Maximum Gate Source Voltage Vgs | -40 V | |
| Maximum Power Dissipation Pd | 225mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.93mm | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type JFET | ||
Sub Type JFET | ||
Maximum Drain Source Voltage Vds 30V | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-23 | ||
Drain Source Current Ids 0.3 to 1.5 mA | ||
Minimum Operating Temperature -55°C | ||
Pin Count 3 | ||
Maximum Gate Source Voltage Vgs -40 V | ||
Maximum Power Dissipation Pd 225mW | ||
Maximum Operating Temperature 150°C | ||
Height 0.93mm | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Automotive Standard No | ||
The ON Semiconductor MMBFJ201 is an N-Channel amplifier designed for low-level audio and general purpose applications.
The MMBFJ201 comes in a SOT-23 3-pin package.
Versions Available:
761-3688 - pack of 25
166-1840 - reel of 3000
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.