Fairchild Semiconductor ISL9V5036S3ST, Type N-Channel IGBT, 46 A 390 V, 3-Pin TO-263, Surface
- RS庫存編號:
- 862-9362
- 製造零件編號:
- ISL9V5036S3ST
- 製造商:
- Fairchild Semiconductor
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可享批量折扣
小計（1 包，共 5 件）*
TWD771.00
(不含稅)
TWD809.55
(含稅)
訂單超過 $1,300.00 免費送貨
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- 800 件從 2026年9月02日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 195 | TWD154.20 | TWD771.00 |
| 200 - 395 | TWD150.20 | TWD751.00 |
| 400 + | TWD147.80 | TWD739.00 |
* 參考價格
- RS庫存編號:
- 862-9362
- 製造零件編號:
- ISL9V5036S3ST
- 製造商:
- Fairchild Semiconductor
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Fairchild Semiconductor | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 46A | |
| Maximum Collector Emitter Voltage Vceo | 390V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | ±10 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | EcoSPARK | |
| Automotive Standard | AEC-Q101 | |
| Energy Rating | 500mJ | |
| 選取全部 | ||
|---|---|---|
品牌 Fairchild Semiconductor | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 46A | ||
Maximum Collector Emitter Voltage Vceo 390V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO ±10 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Series EcoSPARK | ||
Automotive Standard AEC-Q101 | ||
Energy Rating 500mJ | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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