Toshiba GT60PR21,STA1F(S IGBT, 60 A 1100 V, 3-Pin TO-3PN, Through Hole

查看所有IGBTs
可享批量折扣

小計（1 件）*

TWD148.00

(不含稅)

TWD155.40

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 55 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
1 - 19TWD148.00
20 - 49TWD146.00
50 - 99TWD140.00
100 - 249TWD137.00
250 +TWD134.00

* 參考價格

RS庫存編號:
799-4889
製造零件編號:
GT60PR21,STA1F(S
製造商:
Toshiba
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Toshiba

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

1100 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

333 W

Package Type

TO-3PN

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.5 x 4.5 x 20mm

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

IGBT Discretes, Toshiba



IGBT Discretes & Modules, Toshiba


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

相關連結