Toshiba GT40WR21,Q(O, Type N-Channel IGBT, 40 A 1800 V, 3-Pin TO-3PN, Through Hole
- RS庫存編號:
- 799-4864
- 製造零件編號:
- GT40WR21,Q(O
- 製造商:
- Toshiba
可享批量折扣
小計（1 件）*
TWD157.00
(不含稅)
TWD164.85
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 182 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 19 | TWD157.00 |
| 20 - 49 | TWD152.00 |
| 50 - 99 | TWD149.00 |
| 100 - 249 | TWD143.00 |
| 250 + | TWD141.00 |
* 參考價格
- RS庫存編號:
- 799-4864
- 製造零件編號:
- GT40WR21,Q(O
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 1800V | |
| Maximum Power Dissipation Pd | 375W | |
| Package Type | TO-3PN | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 5.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 1800V | ||
Maximum Power Dissipation Pd 375W | ||
Package Type TO-3PN | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 5.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
相關連結
- Toshiba GT60PR21 Type N-Channel IGBT 3-Pin TO-3PN, Through Hole
- Toshiba 2SC5242-O(Q) Transistor 230 V, 3-Pin TO-3PN
- Toshiba 2SA1962-O(Q) Transistor -230 V, 3-Pin TO-3PN
- Toshiba 2SC5198-O(Q) Transistor 140 V, 3-Pin TO-3PN
- Toshiba 2SC5358-O(Q) Transistor 230 V, 3-Pin TO-3PN
- Toshiba 2SA1986-O(Q) Transistor -230 V, 3-Pin TO-3PN
- Toshiba Type N-Channel MOSFET 250 V EnhancementS1F(O
- Toshiba GT60J323(Q) 60 A 600 V Through Hole