製造零件編號

Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3PN, Through Hole

RS庫存編號:: 799-4864
製造零件編號:: GT40WR21,Q(O
製造商:: Toshiba

Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3PN, Through Hole

可享批量折扣

小計（1 件）*

TWD157.00

(不含稅)

TWD164.85

訂單超過 $1,300.00 免費送貨

有庫存

82 件準備從其他地點送貨
加上 100 件從 2026年1月26日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位
1 - 19	TWD157.00
20 - 49	TWD152.00
50 - 99	TWD149.00
100 - 249	TWD143.00
250 +	TWD141.00

* 參考價格

RS庫存編號:: 799-4864
製造零件編號:: GT40WR21,Q(O
製造商:: Toshiba

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Toshiba
	Maximum Continuous Collector Current	40 A
	Maximum Collector Emitter Voltage	1800 V
	Maximum Gate Emitter Voltage	±25V
	Maximum Power Dissipation	375 W
	Package Type	TO-3PN
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	15.5 x 4.5 x 20mm
	Maximum Operating Temperature	+175 °C

	選取全部
	品牌 Toshiba
	Maximum Continuous Collector Current 40 A
	Maximum Collector Emitter Voltage 1800 V
	Maximum Gate Emitter Voltage ±25V
	Maximum Power Dissipation 375 W
	Package Type TO-3PN
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Transistor Configuration Single
	Dimensions 15.5 x 4.5 x 20mm
	Maximum Operating Temperature +175 °C

COO (Country of Origin):: JP

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3PN, Through Hole

訂單超過 $1,300.00 免費送貨

IGBT Discretes, Toshiba

相關連結