STMicroelectronics, Type N-Channel Trench Gate Field Stop IGBT, 60 A 600 V, 3-Pin TO-3PF, Through Hole
- RS庫存編號:
- 792-5779P
- 製造零件編號:
- STGFW30V60DF
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計 8 件 (以管提供)*
TWD684.00
(不含稅)
TWD718.24
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 20 個，準備發貨
單位 | 每單位 |
|---|---|
| 8 - 14 | TWD85.50 |
| 16 + | TWD83.50 |
* 參考價格
- RS庫存編號:
- 792-5779P
- 製造零件編號:
- STGFW30V60DF
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | Trench Gate Field Stop IGBT | |
| Maximum Continuous Collector Current Ic | 60A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 260W | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | ECOPACK | |
| Length | 15.7mm | |
| Series | V | |
| Height | 26.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type Trench Gate Field Stop IGBT | ||
Maximum Continuous Collector Current Ic 60A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 260W | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals ECOPACK | ||
Length 15.7mm | ||
Series V | ||
Height 26.7mm | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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