STMicroelectronics, Type N-Channel IGBT, 200 A 600 V, 4-Pin ISOTOP, Clamp
- RS庫存編號:
- 686-8348P
- 製造零件編號:
- STGE200NB60S
- 製造商:
- STMicroelectronics
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TWD3,168.90
(含稅)
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單位 | 每單位 |
|---|---|
| 3 + | TWD1,006.00 |
* 參考價格
- RS庫存編號:
- 686-8348P
- 製造零件編號:
- STGE200NB60S
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 200A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 600W | |
| Package Type | ISOTOP | |
| Mount Type | Clamp | |
| Channel Type | Type N | |
| Pin Count | 4 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 12.2mm | |
| Length | 38.2mm | |
| Standards/Approvals | ECOPACK, JESD97 | |
| Series | Powermesh | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 200A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 600W | ||
Package Type ISOTOP | ||
Mount Type Clamp | ||
Channel Type Type N | ||
Pin Count 4 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 12.2mm | ||
Length 38.2mm | ||
Standards/Approvals ECOPACK, JESD97 | ||
Series Powermesh | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.