Infineon IHW20N65R5XKSA1 IGBT, 20 A 650 V, 3-Pin PG-TO-247, Through Hole
- RS庫存編號:
- 273-7440
- 製造零件編號:
- IHW20N65R5XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD1,371.00
(不含稅)
TWD1,439.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 120 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 90 | TWD45.70 | TWD1,371.00 |
| 120 + | TWD44.30 | TWD1,329.00 |
* 參考價格
- RS庫存編號:
- 273-7440
- 製造零件編號:
- IHW20N65R5XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current Ic | 20A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | PG-TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JESD-022, RoHS | |
| Width | 16.13 mm | |
| Height | 5.21mm | |
| Length | 21.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current Ic 20A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type PG-TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JESD-022, RoHS | ||
Width 16.13 mm | ||
Height 5.21mm | ||
Length 21.1mm | ||
Automotive Standard No | ||
The Infineon IGBT is a reverse conducting IGBT with monolithic body diode. This IGBT has powerful monolithic reverse conducting diode with low forward voltage and qualified according to JESD022 for target applications. It has easy parallel switching capability due to positive temperature coefficient in VCEsat. This IGBT is recommended for induction cooking, inverter zed microwave ovens and resonant converters.
Low EMI
Halogen free
RoHS compliant
High ruggedness
Pb free lead plating
Stable temperature behaviour
Very low VCEsat and low Eoff
Very tight parameter distribution
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