Infineon IGB30N60H3ATMA1 IGBT, 60 A 600 V, 3-Pin PG-TO263-3, Through Hole
- RS庫存編號:
- 273-7425
- 製造零件編號:
- IGB30N60H3ATMA1
- 製造商:
- Infineon
可享批量折扣
小計(1 包,共 2 件)*
TWD169.00
(不含稅)
TWD177.44
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 984 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 48 | TWD84.50 | TWD169.00 |
| 50 - 98 | TWD77.00 | TWD154.00 |
| 100 - 248 | TWD71.00 | TWD142.00 |
| 250 - 498 | TWD65.50 | TWD131.00 |
| 500 + | TWD64.00 | TWD128.00 |
* 參考價格
- RS庫存編號:
- 273-7425
- 製造零件編號:
- IGB30N60H3ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 60 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 187 W | |
| Package Type | PG-TO263-3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 187 W | ||
Package Type PG-TO263-3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
The Infineon IGBT is a high speed IGBT in Trench and Field stop technology. This IGBT has 175 degree Celsius maximum junction temperature and qualified according to JEDEC for target applications. This IGBT is recommended for uninterruptible power supplies, welding converters and converters with high switching frequency applications.
Low EMI
Low VCEsat
RoHS compliant
Pb free lead plating
Very low turn off energy
Halogen free mould compound
Low VCEsat
RoHS compliant
Pb free lead plating
Very low turn off energy
Halogen free mould compound
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
相關連結
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