Infineon FP50R12KT3BOSA1 IGBT Module, 75 A 1200 V Module, Panel

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小計(1 托盤,共 10 件)*

TWD33,622.00

(不含稅)

TWD35,303.10

(含稅)

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  • 2026年6月04日 發貨
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每單位
每托盤*
10 - 90TWD3,362.20TWD33,622.00
100 +TWD3,227.70TWD32,277.00

* 參考價格

RS庫存編號:
273-7402
製造零件編號:
FP50R12KT3BOSA1
製造商:
Infineon
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品牌

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

75A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

280W

Package Type

Module

Mount Type

Panel

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Maximum Operating Temperature

125°C

Length

122mm

Standards/Approvals

EN61140, IEC61140

Width

62 mm

Automotive Standard

No

The Infineon IGBT module has 1200V collector emitter voltage and 50A continuous DC collector current. It has copper base plate for optimized heat spread and low stray inductance module design. This IGBT module available with fast TRENCHSTOP IGBT3 and NTC.

Thermal resistance

High reliability

High power density

Low switching losses

Compact module concept

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