Infineon DDB6U75N16W1RBOMA1 IGBT Module, 69 A 1200 V Module, Panel Mount

可享批量折扣

小計(1 托盤,共 24 件)*

TWD22,303.20

(不含稅)

TWD23,418.24

(含稅)

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每單位
每托盤*
24 - 96TWD929.30TWD22,303.20
120 +TWD901.40TWD21,633.60

* 參考價格

RS庫存編號:
273-7360
製造零件編號:
DDB6U75N16W1RBOMA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current

69 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

+/-20V

Maximum Power Dissipation

335 W

Package Type

Module

Mounting Type

Panel Mount

The Infineon Diode Bridge Modules with Brake Chopper and NTC for a more compact converter design. It has 1600 V repetitive peak reverse voltage and 65 A Maximum RMS forward current per chip.

Thermal resistance
Al2O3 internal isolation
Total power dissipation 335W
15 A continuous DC forward current

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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