Infineon BSC018NE2LSATMA1, Type N-Channel IGBT, 153 A 25 V, 8-Pin PG-TDSON-8, Through Hole

小計(1 卷,共 5000 件)*

TWD80,500.00

(不含稅)

TWD84,500.00

(含稅)

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  • 2026年9月28日 發貨
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RS庫存編號:
273-5233
製造零件編號:
BSC018NE2LSATMA1
製造商:
Infineon
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品牌

Infineon

Maximum Continuous Collector Current Ic

153A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

25V

Number of Transistors

1

Maximum Power Dissipation Pd

2.5W

Package Type

PG-TDSON-8

Mount Type

Through Hole

Channel Type

Type N

Pin Count

8

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.1mm

Width

6.1 mm

Standards/Approvals

IEC61249-2-21

Height

1.51mm

Automotive Standard

No

The Infineon MOSFET is a 25 V N channel MOSFET. It is optimized for high performance buck converter. This MOSFET is qualified according to JEDEC for target applications. This MOSFET is halogen free according to IEC61249 2 21 standard.

RoHS compliant

Pb free lead plating

Very low on resistance

Superior thermal resistance

100 percent avalanche tested

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